期刊名称：Bulletin of the Institute of Heat Engineering
印刷版ISSN：2083-4187
出版年度：2016
卷号：96
期号：2
页码：110
语种：English
出版社：Warsaw University of Technology
摘要：The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flowrate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. Theaim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since thereare many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactorgeometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have beenconsidered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside thereactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numericalsimulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during thegrowth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of thesubstrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and itsgrowth rate.
其他摘要：The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flow rate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. The aim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since there are many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactor geometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have been considered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside the reactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numerical simulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during the growth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of the substrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and its growth rate.
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