文章基本信息

标题：Power Optimization in DRAM using FinFET
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作者：S.Selvarasu] ; S.Saravanan
期刊名称：International Journal of Innovative Research in Science, Engineering and Technology
印刷版ISSN：2347-6710
电子版ISSN：2319-8753
出版年度：2015
期号：MULTICON
页码：910
出版社：S&S Publications
摘要：In the world of Integrated Circuits, Complementary Metal–Oxide–Semiconductor (CMOS) has lost itsefficiency during scaling beyond 32nm. Scaling causes severe Short Channel Effects (SCE) which are difficult tohold back. As a result of such SCE many alternate devices have been studied. Some of the major contestants includeMulti Gate Field Effect Transistor (MuGFET) like FinFET, Nano tubes, Nano wires etc. In this work, the basic gatesand memory circuits like DRAM are designed in HSPICE software using CMOS structure and FinFET structures areanalyzed and their performances like average power, standby power dissipation and leakage power are compared. A32nm technology FinFET model is used to design DRAM.
关键词：CMOS; Dynamic RAM; FinFET; Memory Cell; and Power optimization